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triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet october 14, 2005 1 6-13 ghz low noise amplifier TGA8399B-SCC key features and performance ? 6-13 ghz frequency range ? 1.5 db typical noise figure midband ? 26 db nominal gain ? high input power handling: ~ 20dbm ? balanced input for low vswr ? 5v @ 65ma self bias ? 0.25um phemt technology ? chip dimensions 3.1 x 2.4 x 0.15 mm primary applications ? point-to-point radio ? x band radar, ecm 8 10 12 14 16 18 20 22 24 26 28 6 7 8 9 10 11 12 13 frequency (ghz) small signal gain (db) -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 return loss (db) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6 7 8 9 10 11 12 13 frequency (ghz) noise figure (db) 4 5 6 7 8 9 10 11 12 13 14 p1db (dbm) nf pout gain input rl output rl typical electrical characteristics self bias, vd=5v, 65ma description the triquint TGA8399B-SCC is a monolithic self- biased low noise amplifier with a balanced input for low vswr. this lna operates from 6 to 13 ghz with a typical mid band noise figure of 1.5 db. the device features high gain of 26 db across the band, while providing a nominal output power at p1db gain compression of 11dbm. typical input and output return loss is 18 db. ground is provided to the circuitry through vias to the backside metallization. the TGA8399B-SCC low noise amplifier is suitable for a variety of commercial and high frequency applications, c and x band applications such as radar receivers, electronic counter measures, decoys, jammers and phased array systems. at 5v the drain current is approximately 65 ma and can be increased or decreased by selection of the appropriate source resistors in each stage. for an application note concerning drain current selection see: http://www.triquint.com/company/divisions/millime ter_wave/appnote_self_bias_of_8399b_c2.pdf lead-free and rohs compliant
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet october 14, 2005 2 table i maximum ratings 5/ symbol parameter value notes v + positive supply voltage 8 v 4/ v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 100 ma 4/ p in input continuous wave power 22 dbm p d power dissipation 1.95w 3/ 4 / t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings apply to each individual fet. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced from 9.2e+8 to 2.5e+6 hours. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings represent the maximum operable values for this device. table ii dc probe test (ta = 25 c 5 c) notes symbol limits units min max i dss1 information only ma i max 169 290 ms gm1 99 239 ms 1/ |v p1,2,3,4,5 |0.5 1.5 v 1/ |v bvgd1 |8 30v 1/ |v bvgs1 |8 30v 1/ v p , v bvgd , and v bvgs are negative. TGA8399B-SCC
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet october 14, 2005 3 table iv thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd = 5 v i d = 65 ma pdiss = 0.325 w 82.14 37.354 9.2e+8 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. table iii rf characteristics (t a = 25 c + 5 c) note test measurement conditions value units self bias, vd=5v min typ max 1/ small signal gain f = 6 - 13 ghz 23 26 db power output @ 1 db gain compression f = 6 - 13 ghz 11 dbm 2/ noise figure f = 6 - 13 ghz f = 10 ghz 2.0 2.5 db db 1/ input return loss magnitude f = 6 - 13 ghz -18 -9.5 db 1/ output return loss magnitude f = 6 - 13 ghz -18 -9.5 db 1/ rf probe data is taken at 1 ghz steps 2/ rf probe data is taken at 10 ghz. TGA8399B-SCC
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet october 14, 2005 4 typical on-wafer electrical characteristics sefl bias, vd=5v, room temperature 23 24 25 26 27 28 29 6 7 8 9 10 11 12 13 frequency (ghz) gain (db ) 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th 0.0 0.5 1.0 1.5 2.0 2.5 3.0 6789101112 frequency (ghz) nf (db) 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th TGA8399B-SCC
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet october 14, 2005 5 -40 -35 -30 -25 -20 -15 -10 -5 0 678910111213 frequency (ghz) irl (db) 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th -40 -35 -30 -25 -20 -15 -10 -5 0 6 7 8 9 10 11 12 13 frequency (ghz) orl (db) 5th 10th 20th 30th 40th 50th 60th 70th 80th 90th 95th typical on-wafer electrical characteristics sefl bias, vd=5v, room temperature TGA8399B-SCC
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet october 14, 2005 6 20 21 22 23 24 25 26 27 28 29 30 6 7 8 9 10 11 12 13 frequency (ghz) small signal gain (db) +125c +75c +50c +25c +0c -25c -55c 0 1 2 3 4 5 6 7 8 9 10 11 12 13 frequency (ghz) noise figure (db) +125c +75c +50c +25c +0c -25c -55c 5 6 7 8 9 10 11 12 13 14 15 7 8 9 10 11 12 13 frequency (ghz) output p1db (dbm) +125c +75c +50c +25c +0c -25c -55c typical performance vs temperature sefl bias, vd=5v, room temperature TGA8399B-SCC
triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet october 14, 2005 7 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing TGA8399B-SCC

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triquint semiconductor texas : phone (972)994 8465 fax (972)994 8504 web: www.triquint.com product data sheet october 14, 2005 8 recommended assembly layout gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. assembly process notes TGA8399B-SCC

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